TBB BUREAU NEW DELHI, MARCH 18, 2021 Scientists from Bangalore have developed a highly reliable, High Electron Mobility Transistor (HEMTs) that is a normally OFF device and can switch currents up to 4A and operates at 600V. This first-ever indigenous HEMT device made from gallium nitride (GaN) is useful in electric cars, locomotives, power transmission and other areas requiring high ...

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