THEBUSINESSBYTES
BUREAU
MUMBAI,
SEPTEMBER 17, 2026
RIR Power Electronics
Ltd has completed the erection and installation of state-of-the-art Silicon
Carbide (SiC) epitaxial wafer manufacturing reactors at its semiconductor
facility in Bhubaneswar, Odisha, marking a key milestone in its plan to
establish India’s first vertically integrated SiC semiconductor production facility.
The readiness of the
facility was witnessed on September 16 by Vishal Dev, Additional Chief
Secretary, Government of Odisha, along with senior government officials, the
company said in a statement.
“This milestone reflects Odisha’s growing role
in India’s semiconductor ambitions and is fully aligned with the Hon’ble Prime
Minister’s vision of Viksit Bharat,” Dev said.
He added that the
state government was proud that RIR Power Electronics had chosen Odisha to
build the facility and remained committed to supporting the project as it
progresses towards strengthening India’s semiconductor manufacturing
capabilities.
The company said the
facility is expected to commence commercial production after completion of the
remaining statutory and regulatory formalities.
Key equipment
required for the SiC epitaxial wafer manufacturing process has been installed,
while essential power connections, utilities and supporting infrastructure have
also been commissioned and put in place.
Once operational, the
facility will manufacture India’s first SiC epitaxial wafers for domestic as
well as global markets, RIR Power Electronics said.
The SiC epitaxial
manufacturing reactors and associated infrastructure form part of the phased
development of the company’s Odisha semiconductor facility, backed by a planned
investment of Rs 618 crore.
The project is aimed
at establishing a vertically integrated SiC semiconductor manufacturing
ecosystem capable of producing advanced SiC-based power semiconductor devices,
including high-power MOSFETs, diodes and modules, catering to requirements
across strategic and high-growth sectors.
SiC technology offers
advantages over conventional silicon-based technologies, including higher
energy efficiency, improved power-handling capability, reduced power losses,
higher operating temperatures and enhanced switching performance.
These attributes are
driving the adoption of SiC semiconductors in a range of applications,
including electric mobility, renewable energy, energy storage, railways,
aerospace, defence, data centres, industrial power electronics and automation.
RIR Power Electronics
said the investment underscores its commitment to the 'Make in India' and
'Atmanirbhar Bharat' initiatives and is intended to contribute to the development
of India's domestic semiconductor ecosystem.
The project is also
expected to support Odisha's emergence as an important hub in the country's
semiconductor value chain by creating advanced manufacturing capabilities and
enabling downstream applications across strategic and industrial sectors.
The company said the development is part of its 'Silicon Carbide to System' approach, under which the SiC epitaxial process represents the foundational stage of an integrated value chain spanning epitaxial wafers and power semiconductor devices and ultimately extending to system-level solutions.
RIR Power Electronics, which is listed on the BSE and NSE, is engaged in the manufacture of high-power semiconductor devices and power electronics solutions.
